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Product Description
Gigabyte GP-GSM2NE3256GNTD
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Form Factor: M.2 2280
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Interface: PCI-Express 3.0 x4, NVMe 1.3
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Total Capacity: 256GB*
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Sequential Read Speed : up to 1700 MB/s**
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Sequential Write speed : up to 1550 MB/s**
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HMB (Host Memory Buffer) supported
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TRIM & S.M.A.R.T supported
SPECIFICATIONS
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Interface
PCI-Express 3.0 x4, NVMe 1.3
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Form Factor
M.2 2280
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Total Capacity
256GB
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NAND
NAND Flash
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External DDR Cache
N/A
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Sequential Read speed
Up to 1700 MB/s
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Sequential Write speed
Up to 1550 MB/s
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Random Read IOPS
Up to 270K
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Random Write IOPS
Up to 340K
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Dimension
80 x 22 x 2.3 mm
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Mean time between failure (MTBF)
1.5M hours
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Power Consumption (Active)
Avg. read : 3.3W ; Write : 2.8W
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Power Consumption (Idle)
1.8mw
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Temperature (Operating)
0°C to 70°C
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Temperature (Storage)
-40°C to 85°C
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